Povutpat Egestas Erat Rhoncus Dapibus Congue Fringippa. Publication: Journal Porttitor, J., P. Priya, M. Dotor, P Pretium, N. Lee-Walsh, and A. Li. 2022. “Povutpat Egestas Erat Rhoncus Dapibus Congue Fringippa..”
Modulating short wavelength fluorescence with long wavelength light Publication: Journal Article Copley, Graeme, Jason G Gillmore, Jeffrey Crisman, Gerdenis Kodis, Christopher L Gray, Brian R Cherry, Benjamin D Sherman, et al. 2014. “Modulating Short Wavelength Fluorescence With Long Wavelength Light”. Journal of the American Chemical Society 136 (34): 11994-3.
Conquering the Low-k Death Curve: Insulating Boron Carbide Dielectrics with Superior Mechanical Properties Publication: Journal Article Nordell, Bradley J, Thuong D Nguyen, Christopher L Keck, Shailesh Dhungana, Anthony N Caruso, William A Lanford, John T Gaskins, et al. 2016. “Conquering the Low-K Death Curve: Insulating Boron Carbide Dielectrics With Superior Mechanical Properties”. Advanced Electronic Materials 2 (7): 1600073.
Influence of topological constraints on ion damage resistance of amorphous hydrogenated silicon carbide Publication: Journal Article Su, Qing, Tianyao Wang, Jonathan Gigax, Lin Shao, William A Lanford, Michael Nastasi, Liyi Li, Gyanendra Bhattarai, Michelle M Paquette, and Sean W King. 2019. “Influence of Topological Constraints on Ion Damage Resistance of Amorphous Hydrogenated Silicon Carbide”. Acta Materialia 165: 587-602.
Role of generated free radicals in synthesis of amorphous hydrogenated boron carbide from orthocarborane using argon bombardment: a ReaxFF molecular dynamics study Publication: Journal Article Baishnab, Nirmal, Rajan Khadka, Michelle M Paquette, Paul Rulis, Nathan A Oyler, Jinwoo Hwang, and Ridwan Sakidja. 2020. “Role of Generated Free Radicals in Synthesis of Amorphous Hydrogenated Boron Carbide from Orthocarborane Using Argon Bombardment: A ReaxFF Molecular Dynamics Study”. Materials Research Express 6 (12): 126461.
Band offsets at amorphous hydrogenated boron nitride/high-k oxide interfaces from x-ray photoelectron spectroscopy with charging effects analysis Publication: Journal Article Paquette, Michelle M, Anthony N Caruso, Justin Brockman, Jeff Bielefeld, Markus Kuhn, and Sean W King. 2020. “Band Offsets at Amorphous Hydrogenated Boron Nitride/High-K Oxide Interfaces from X-Ray Photoelectron Spectroscopy With Charging Effects Analysis”. Journal of Vacuum Science & Technology B 38 (3): 030601.
Direct Determination of Medium Range Ordering in Amorphous Hydrogenated Boron Carbide for Low-k Dielectric Applications Publication: Journal Article Gharacheh, Mehrdad Abbasi, Soohyun Im, Jared Johnson, Gabriel Calderon Ortiz, Menglin Zhu, Nathan Oyler, Michelle Paquette, Paul Rulis, Ridwan Sakidja, and Jinwoo Hwang. 2020. “Direct Determination of Medium Range Ordering in Amorphous Hydrogenated Boron Carbide for Low-K Dielectric Applications”. Microscopy and Microanalysis 26 (S2): 248-49.
Single-carrier charge collection in thin direct-conversion semiconductor neutron detector: A numerical simulation Publication: Journal Article Bhattarai, Gyanendra, Anthony N Caruso, and Michelle M Paquette. 2021. “Single-Carrier Charge Collection in Thin Direct-Conversion Semiconductor Neutron Detector: A Numerical Simulation”. Journal of Applied Physics 129 (19): 194502.
Povutpat Egestas Erat Rhoncus Dapibus Senectus Fringippa. Publication: Working Paper Stone, J, P Priya, M. Wong, P Stanbrige, N Lee-Walsh, and A Li. Working Paper. “Povutpat Egestas Erat Rhoncus Dapibus Senectus Fringippa..”
Povutpat Egestas Erat Rhoncus Dapibus Senectus Fringippa. Publication: Working Paper Stone, J, P Priya, M. Wong, P Stanbrige, N Lee-Walsh, and A Li. 2020. “Povutpat Egestas Erat Rhoncus Dapibus Senectus Fringippa..”