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Investigation and review of the thermal, mechanical, electrical, optical, and structural properties of atomic layer deposited high-k dielectrics: Beryllium oxide, aluminum oxide, hafnium oxide, and aluminum nitride

Gaskins, John T, Patrick E Hopkins, Devin R Merrill, Sage R Bauers, Erik Hadland, David C Johnson, Donghyi Koh, et al. 2017. “Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-K Dielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride”. ECS Journal of Solid State Science and Technology 6 (10): N189-N208.

A BF3-mediated nitrogen-to-carbon rearrangement of N-protected 2, 3-dihydro-3-hydroxy-1H-benzisoindol-1-ones, and its interception for a facile preparation of 3-substituted benzisoindolones