Publications by Year: 2017

Im, S.; Paquette, M. M.; Belhadj-Larbi, M.; Rulis, P.; Sakidja, R.; Hwang, J. Nanoscale Structure-Property Relationship in Amorphous Hydrogenated Boron Carbide for Low-K Dielectric Applications. Microscopy and Microanalysis 2017, 23 (S1), 1486-1487.

Nordell, B. J.; Nguyen, T. D.; Caruso, A. N.; Purohit, S. S.; Oyler, N. A.; Lanford, W. A.; Gidley, D. W.; Gaskins, J. T.; Hopkins, P. E.; Henry, P.; King, S. W.; Paquette, M. M. Carbon-Enriched Amorphous Hydrogenated Boron Carbide Films for Very-Low-K Interlayer Dielectrics. Advanced Electronic Materials 2017, 3 (12), 1700116.

Gaskins, J. T.; Hopkins, P. E.; Merrill, D. R.; Bauers, S. R.; Hadland, E.; Johnson, D. C.; Koh, D.; Yum, J. H.; Banerjee, S.; Nordell, B. J.; Paquette, M. M.; Caruso, A. N.; Lanford, W. A.; Henry, P.; Ross, L. L.; Li, H.; Li, L.; French, M.; Rudolph, A. N.; King, S. W. Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-K Dielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride. ECS Journal of Solid State Science and Technology 2017, 6 (10), N189-N208.

Paquette, M. M.; Nordell, B. J.; Caruso, A. N.; Sato, M.; Fujiwara, H.; King, S. W. Optimization of Amorphous Semiconductors and Low-/High-K Dielectrics through Percolation and Topological Constraint Theory. MRS Bulletin (Special Issue: Material Functionalities from Molecular Rigidity) 2017, 42 (1), 39-44.

Dhungana, S.; Nguyen, T. D.; Nordell, B. J.; Caruso, A. N.; Paquette, M. M.; Chollon, G.; Lanford, W. A.; Scharfenberger, K.; Jacob, D.; King, S. W. Boron and High-K Dielectrics: Possible Fourth Etch Stop Colors for Multipattern Optical Lithography Processing. Journal of Vacuum Science & Technology A 2017, 35 (2), 021510.