Wisbey, D. S.; Vissers, M. R.; Gao, J.; Kline, J. S.; Sandberg, M. O.; Weides, M. P.; Paquette, M.; Karki, S.; Brewster, J.; Alameri, D.; Kuljanishvili, I.; Caruso, A. N.; Pappas, D. P. Dielectric Loss of Boron-Based Dielectrics on Niobium Resonators. Journal of Low Temperature Physics 2019, 195, 474-486.
Publications
2019
Su, Q.; Wang, T.; Gigax, J.; Shao, L.; Lanford, W. A.; Nastasi, M.; Li, L.; Bhattarai, G.; Paquette, M. M.; King, S. W. Influence of Topological Constraints on Ion Damage Resistance of Amorphous Hydrogenated Silicon Carbide. Acta Materialia 2019, 165, 587-602.
2018
Paquette, M. M.; Plaul, D.; Kurimoto, A.; Patrick, B. O.; Frank, N. L. Opto-Spintronics: Photoisomerization-Induced Spin State Switching at 300 K in Photochrome Cobalt—dioxolene Thin Films. Journal of the American Chemical Society 2018, 140 (44), 14990-15000.
Bhattarai, G.; Caruso, A. N.; Paquette, M. M. Steady-State Space-Charge-Limited Current Analysis of Mobility With Negative Electric Field Dependence. Journal of Applied Physics 2018, 124 (4), 045701.
Frank, N. L.; Plaul, D.; Paquette, M. M.; Kurimoto, A. Bistable Complexes and Devices and Methods of Making and Using the Same, US Patent Application No. 15/881,371 (abandoned), 2018.
Bhattarai, G.; Dhungana, S.; Nordell, B. J.; Caruso, A. N.; Paquette, M. M.; Lanford, W. A.; King, S. W. Underlying Role of Mechanical Rigidity and Topological Constraints in Physical Sputtering and Reactive Ion Etching of Amorphous Materials. Physical Review Materials 2018, 2 (5), 055602.
2017
Im, S.; Paquette, M. M.; Belhadj-Larbi, M.; Rulis, P.; Sakidja, R.; Hwang, J. Nanoscale Structure-Property Relationship in Amorphous Hydrogenated Boron Carbide for Low-K Dielectric Applications. Microscopy and Microanalysis 2017, 23 (S1), 1486-1487.
Gaskins, J. T.; Hopkins, P. E.; Merrill, D. R.; Bauers, S. R.; Hadland, E.; Johnson, D. C.; Koh, D.; Yum, J. H.; Banerjee, S.; Nordell, B. J.; Paquette, M. M.; Caruso, A. N.; Lanford, W. A.; Henry, P.; Ross, L. L.; Li, H.; Li, L.; French, M.; Rudolph, A. N.; King, S. W. Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-K Dielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride. ECS Journal of Solid State Science and Technology 2017, 6 (10), N189-N208.
Nordell, B. J.; Nguyen, T. D.; Caruso, A. N.; Purohit, S. S.; Oyler, N. A.; Lanford, W. A.; Gidley, D. W.; Gaskins, J. T.; Hopkins, P. E.; Henry, P.; King, S. W.; Paquette, M. M. Carbon-Enriched Amorphous Hydrogenated Boron Carbide Films for Very-Low-K Interlayer Dielectrics. Advanced Electronic Materials 2017, 3 (12), 1700116.
Dhungana, S.; Nguyen, T. D.; Nordell, B. J.; Caruso, A. N.; Paquette, M. M.; Chollon, G.; Lanford, W. A.; Scharfenberger, K.; Jacob, D.; King, S. W. Boron and High-K Dielectrics: Possible Fourth Etch Stop Colors for Multipattern Optical Lithography Processing. Journal of Vacuum Science & Technology A 2017, 35 (2), 021510.